Photodiode with deep trench isolation structures

A photodetector, comprising:

• a photodiode device;
• and
• a control circuit configured to control an operation of the photodiode device, wherein the photodiode device includes:
• a layer of semiconductor material;
• a pixel including a diode structure on a first side of the layer of semiconductor layer and a conductive layer on a second side of the layer of semiconductor material;
• a deep trench isolation (DTI) structure surrounding the pixel;
• a first vertical conductive layer over a first side of the DTI structure;
• and
• a second vertical conductive layer over a second side of the DTI structure,
• wherein the first vertical conductive layer extends from the conductive layer to a first contact on the first side of each DTI structure, and the second vertical conductive layer extends from the conductive layer to a second contact on the second side of each DTI structure.

A method of forming a photodiode device including a plurality of pixels, the method comprising:

• forming, on a substrate comprising a layer of conductive material and a layer of semiconductor material, a first vertical conductive layer and a second vertical conductive layer that extend through the layer of conductive material and the layer of semiconductor material;
• forming a diode structure on a first side of the layer of semiconductor material;
• and
• forming a deep trench isolation (DTI) structure between the first and second vertical conductive layers, the DTI structure isolating the diode structure from an adjacent diode structure,
• wherein the first vertical conductive layer extends from the conductive layer to a first contact on the first side of the DTI structure, and the second vertical conductive layer extends from the conductive layer to a second contact on the second side of the DTI structure.