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US 12,751,094 B2Granted
Backside contact solar cells with separated polysilicon doped regions
OwnerDavid D. Smithinventor
Life of this patent
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Abstract
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
Claims21
A solar cell comprising:
- a silicon substrate having a front side and a backside;
- a first dielectric layer disposed on the backside of the silicon substrate;
- a P-type doped polysilicon layer and an N-type doped polysilicon layer disposed on the first dielectric layer, the P-type doped polysilicon layer not in contact with the N-type doped polysilicon layer;
- a passivation layer in contact with the P-type doped polysilicon layer, the N-type doped polysilicon layer, and the silicon substrate;
- a first metal contact finger that is electrically connected to the P-type doped polysilicon layer;
- and
- a second metal contact finger that is electrically connected to the N-type doped polysilicon layer.
4 more elements
Dependencies are inferred from the claim text.