Flip-chip field effect transistor layouts and structures

A transistor device, comprising:

• a substrate;
• a plurality of transistor unit cells arranged in parallel on the substrate, wherein each of the transistor unit cells comprises a source contact, a drain contact, and a gate finger between the source contact and the drain contact, wherein the gate finger extends in a first direction and has a first end and a second end;
• wherein the source contacts, the drain contacts and the gate fingers of the plurality of unit cells define an active region of the transistor device in a portion of the substrate where the source contacts, the drain contacts and the gate fingers overlap in the first direction;
• a first solder bump on the transistor device, wherein the first solder bump is electrically connected to the gate finger of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger;
• and
• a gate strap that extends in a second direction that is perpendicular to the first direction, wherein the gate strap extends across a source contact of the first one of the unit cells adjacent the gate finger of the first one of the unit cells and is insulated from the source contact, wherein the first solder bump is formed on the gate strap.