Integration of a vertical diode and a transistor

Abstract

A semiconductor integrated circuit (IC) device includes both a transistor and a vertical diode. In some examples, the transistor includes a backside source/drain (S/D) contact and the vertical diode includes a backside bottom contact. The backside S/D contact and the backside bottom contact may be electrically connected to a backside BEOL network. The transistor may further include a S/D region that includes an upper S/D portion and a trench S/D portion that has a higher dopant concentration relative to the upper portion. The backside S/D contact may be connected to the trench S/D portion of the S/D region. The vertical diode may include a bottom doped region which may be simultaneously formed along with the trench S/D portion and may be composed of substantially the same materials. The backside bottom contact may be directly connected to the bottom doped region of the vertical diode.

Dependencies are inferred from the claim text.