Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device comprising:

• a semiconductor structure including a silicon carbide substrate of a first conductivity type, a buffer layer of the first conductivity type provided on the silicon carbide substrate, and a drift layer of the first conductivity type provided on the buffer layer;
• a source pad;
• a gate insulating film;
• and
• a gate electrode, wherein
• in the semiconductor structure, an active region and a termination region connected to the active region along the outer periphery of the active region are defined,
• the active region of the semiconductor structure includes
• a source region of the first conductivity type selectively provided in an upper portion of the drift layer and electrically connected to the source pad, and
• a first well region of a second conductivity type that isolates the source region from the drift layer and is insulated from the gate electrode by the gate insulating film,
• the termination region of the semiconductor structure includes
• a second well region of the second conductivity type provided in the upper portion of the drift layer, and
• a JTE region of the second conductivity type provided outside of the second well region,
• the silicon carbide substrate includes a high resistance region provided in the termination region, or provided in the termination region and a portion of the active region that is in contact with the termination region, and in contact with the buffer layer, and
• resistance of the high resistance region is higher than resistance of a remaining region of the silicon carbide substrate other than the high resistance region.