Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeeeun Yang, Sangwook Kim, Euntae Kim, Kwanghee Lee, Moonil Jung
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Abstract
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a lower electrode provided on a substrate, a buffer layer provided on the lower electrode and including first indium, an oxide semiconductor layer provided on the buffer layer and including second indium, a gate electrode provided apart from the oxide semiconductor layer, and an upper electrode provided on the oxide semiconductor layer, wherein a content of the first indium is greater than a content of the second indium.
Claims26
A semiconductor device comprising:
- a substrate;
- a lower electrode on the substrate;
- a first buffer layer on the lower electrode, the first buffer layer including first indium;
- an oxide semiconductor layer on the first buffer layer, the oxide semiconductor layer including second indium;
- a gate insulating layer on the oxide semiconductor layer;
- a gate electrode on the gate insulating layer;
- and
- an upper electrode on the oxide semiconductor layer,
- wherein a content of the first indium in the first buffer layer is greater than a content of the second indium in the oxide semiconductor layer,
- wherein the first buffer layer is between the lower electrode and the oxide semiconductor layer,
- wherein the upper electrode and the lower electrode are spaced apart from each other in a perpendicular direction extending perpendicular to the substrate,
- wherein the oxide semiconductor layer includes a first area and a second area,
- wherein a distance from the first area of the oxide semiconductor layer to the first buffer layer is smaller than a distance from the second area of the oxide semiconductor layer to the first buffer layer, and
- wherein a content of the second indium in the first area of the oxide semiconductor layer is greater than a content of the second indium in the second area of the oxide semiconductor layer.
A method of manufacturing a semiconductor device, the method comprising:
- arranging a lower electrode on a substrate;
- depositing, on the lower electrode, a buffer layer including first indium;
- depositing, on the buffer layer, an oxide semiconductor layer including second indium;
- depositing a gate insulating layer on the oxide semiconductor layer;
- depositing a gate electrode on the gate insulating layer;
- and
- depositing an upper electrode on the oxide semiconductor layer,
- wherein a content of the first indium in the buffer layer is greater than a content of the second indium in the oxide semiconductor layer,
- wherein the buffer layer is between the lower electrode and the oxide semiconductor layer,
- wherein the upper electrode and the lower electrode are spaced apart from each other in a perpendicular direction that extends perpendicular to the substrate,
- wherein the oxide semiconductor layer includes a first area and a second area,
- wherein a distance from the first area of the oxide semiconductor layer to the buffer layer is smaller than a distance from the second area of the oxide semiconductor layer to the buffer layer, and
- wherein a content of the second indium in the first area of the oxide semiconductor layer is greater than a content of the second indium in the second area of the oxide semiconductor layer.
Dependencies are inferred from the claim text.