Film bulk acoustic resonator

A film bulk acoustic resonator (FBAR), comprising a substrate, an acoustic reflector, a first electrode, a piezoelectric layer, a second electrode, and an etch-stop layer, wherein the acoustic reflector is arranged on the substrate, the first electrode is arranged on a side of the substrate and covers the acoustic reflector, and at least a part of the piezoelectric layer is arranged on a side of the first electrode away from the substrate;

• the second electrode is arranged on a side of the piezoelectric layer away from the first electrode, and the etch-stop layer is arranged on a side of the second electrode away from the piezoelectric layer;
• wherein the FBAR further comprises at least two stacked components arranged on a side of the etch-stop layer away from the second electrode, each of the at least two stacked components is a frame structure, and each of the at least two stacked components comprises a mass load layer and an insertion layer stacked sequentially;
• at least an edge of each of the at least two stacked components is misaligned along a direction perpendicular to thickness direction of the FBAR.