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US 12,750,030 B2Granted
Boundary acoustic wave device with multi-layer piezoelectric substrate
AssigneeSkyworks Solutions, Inc.
InventorsRei Goto, Hironori Fukuhara
Life of this patent
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Abstract
Aspects of this disclosure relate to a boundary acoustic wave device. The boundary acoustic wave device can include two low acoustic impedance layers, an interdigital transducer electrode, piezoelectric material positioned between the interdigital transducer electrode and each of the two low acoustic impedance layers, and two high acoustic impedance substrates. The two low acoustic impedance layers can be positioned between the two high acoustic impedance substrates. Related acoustic wave filters, multiplexers, radio frequency modules, wireless communication devices, and methods are disclosed.
Claims20
A boundary acoustic wave device comprising:
- two low acoustic impedance layers;
- an interdigital transducer electrode;
- piezoelectric material on opposing sides of the interdigital transducer electrode such that the piezoelectric material is positioned between the interdigital transducer electrode and each of the two low acoustic impedance layers;
- and
- two high acoustic impedance substrates, the two low acoustic impedance layers being positioned between the two high acoustic impedance substrates, the two low acoustic impedance layers each having a lower acoustic impedance than each of the two high acoustic impedance substrates, the two high acoustic impedance substrates each having a higher acoustic impedance than the piezoelectric material, at least one of the two high acoustic impedance substrates being a silicon substrate, and the boundary acoustic wave device being configured to generate a boundary acoustic wave.
2 more elements
A boundary acoustic wave device comprising:
- two low acoustic impedance layers;
- an interdigital transducer electrode;
- piezoelectric material on opposing sides of the interdigital transducer electrode such that the piezoelectric material is positioned between the interdigital transducer electrode and each of the two low acoustic impedance layers;
- a thermally conductive layer positioned between the interdigital transducer electrode and the piezoelectric material on one of the opposing sides of the interdigital transducer electrode;
- and
- two high acoustic impedance substrates, the two low acoustic impedance layers being positioned between the two high acoustic impedance substrates, the two low acoustic impedance layers each having a lower acoustic impedance than each of the two high acoustic impedance substrates, the two high acoustic impedance substrates each having a higher acoustic impedance than the piezoelectric material, and the boundary acoustic wave device being configured to generate a boundary acoustic wave.
3 more elements
A boundary acoustic wave device comprising:
- two low acoustic impedance layers;
- an interdigital transducer electrode;
- piezoelectric material on opposing sides of the interdigital transducer electrode such that the piezoelectric material is positioned between the interdigital transducer electrode and each of the two low acoustic impedance layers, the interdigital transducer electrode is in contact with the piezoelectric material on only one of the opposing sides of the interdigital transducer electrode;
- and
- two high acoustic impedance substrates, the two low acoustic impedance layers being positioned between the two high acoustic impedance substrates, the two low acoustic impedance layers each having a lower acoustic impedance than each of the two high acoustic impedance substrates, the two high acoustic impedance substrates each having a higher acoustic impedance than the piezoelectric material, and the boundary acoustic wave device being configured to generate a boundary acoustic wave.
2 more elements
A boundary acoustic wave device comprising:
- two low acoustic impedance layers;
- an interdigital transducer electrode;
- piezoelectric material on opposing sides of the interdigital transducer electrode such that the piezoelectric material is positioned between the interdigital transducer electrode and each of the two low acoustic impedance layers;
- and
- two high acoustic impedance substrates, the two low acoustic impedance layers being positioned between the two high acoustic impedance substrates, the two low acoustic impedance layers each having a lower acoustic impedance than each of the two high acoustic impedance substrates, the two high acoustic impedance substrates each having a higher acoustic impedance than the piezoelectric material, at least one of the two high acoustic impedance substrates is a substrate that includes at least one of synthetic diamond, quartz, or spinel, and the boundary acoustic wave device being configured to generate a boundary acoustic wave.
2 more elements
Dependencies are inferred from the claim text.