RF circuit for preventing damage to power amplifier
AssigneeSamsung Electronics Co., Ltd.
InventorsYousung Lee, Dongil Yang, Yohan Moon, Hyoseok Na, Taeyoung Kim
Life of this patent
Estimating the term…
Loading patent…
AssigneeSamsung Electronics Co., Ltd.
InventorsYousung Lee, Dongil Yang, Yohan Moon, Hyoseok Na, Taeyoung Kim
Estimating the term…
According to an embodiment, a Radio Frequency (RF) circuit comprises: a power amplifier; a switching circuit configured to electrically connect the power amplifier to a first switch in case that an output voltage of the power amplifier does not exceed a threshold voltage and to electrically connect the power amplifier to a terminating resistor in case that the output voltage of the power amplifier exceeds the threshold voltage; a first electrical path formed between the power amplifier and the switching circuit; and a first diode connected to a second electrical path formed from a first point of the first electrical path to the switching circuit, the first diode connected between the first point and the switching circuit.
A Radio Frequency (RF) circuit comprising:
An RF circuit comprises:
Dependencies are inferred from the claim text.