Fully integrated CMOS multiple MOSFET-stacked double push-pull RF power amplifier

A main amplification circuit, applied to an RF power amplifier, wherein the main amplification circuit comprises:

• two PMOS amplification modules and two NMOS amplification modules, wherein each PMOS amplification module comprises a common-source-common-gate (CSCG) structure formed by a stack of K PMOS transistors, and each NMOS transistor amplification module comprises a CSCG structure formed by a stack of K NMOS transistors, with K being a natural number greater than or equal to 3 and less than or equal to 5;
• wherein a first PMOS amplification module and a first NMOS amplification module are connected in series between a supply voltage and ground;
• wherein a gate of a main amplification transistor of the first PMOS amplification module and a gate of a main amplification transistor of the first NMOS amplification module are connected to a non-inverting input of the main amplification circuit, and a connection node of the first PMOS amplification module and the first NMOS amplification module is connected to an inverting output of the main amplification circuit;
• wherein a second PMOS amplification module and a second NMOS amplification module are connected in series between the supply voltage and ground;
• wherein a gate of a main amplification transistor of the second PMOS amplification module and a gate of a main amplification transistor of the second NMOS amplification module are connected to an inverting input of the main amplification circuit;
• wherein a connection node of the second PMOS amplification module and the second NMOS amplification module is connected to a non-inverting output of the main amplification circuit;
• wherein gates of the transistors in the PMOS amplification modules and the NMOS amplification modules are connected to corresponding bias voltages respectively;
• wherein the bias voltages connected to main amplification transistors in the two PMOS amplification modules and the two NMOS amplification modules are generated by same bias current.