In-situ back side plasma treatment for residue removal from substrates
AssigneeLam Research Corporation
InventorsTu Hong, Chezheng Cao, Chunhai Ji, Ming Li
Life of this patent
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Abstract
A method for processing a substrate loading the substrate onto a plurality of lift pins passing through a pedestal arranged in a processing chamber. The plurality of lift pins are lowered to rest the substrate on the pedestal. A deposition gas mixture is supplied to deposit film on the substrate. The supply of the deposition gas mixture is stopped. The substrate is raised above the pedestal in the processing chamber using the plurality of lift pins. An etch gas mixture is supplied. Plasma is struck in the processing chamber between the substrate and the surface of the pedestal to remove residual film.
Claims14
A method for processing a substrate, comprising:
- loading the substrate onto a plurality of lift pins passing through a pedestal arranged in a processing chamber;
- lowering the plurality of lift pins to rest the substrate on the pedestal;
- supplying a deposition gas mixture to deposit film on the substrate;
- stopping the supply of the deposition gas mixture;
- raising the substrate above the pedestal in the processing chamber using the plurality of lift pins;
- supplying an etch gas mixture;
- and
- striking plasma in the processing chamber between the substrate and the surface of the pedestal to perform etching to remove residual film.
Dependencies are inferred from the claim text.