Method for managing virtual zone
AssigneeSamsung Electronics Co., Ltd.
InventorsSeungjun Yang, Nam Wook Kang
Life of this patent
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Abstract
A storage device includes a non-volatile memory including a plurality of blocks, and a storage controller configured to divide the plurality of blocks into a plurality of zones, determine a first zone of the plurality of zones corresponding to a logical address received from a host, based on a value of the logical address, map the logical address to a physical address corresponding to a first block in the first zone, and replace at least one of the logical address or the first block with a logical address or a block of a second zone of the plurality of zones. The second zone is different from the first zone.
Claims20
A storage device comprising:
- a non-volatile memory including a plurality of blocks;
- and
- a storage controller configured to
- divide the plurality of blocks into a plurality of zones,
- determine a first zone of the plurality of zones corresponding to a logical address received from a host, based on a bit value of the logical address,
- map the logical address to a physical address corresponding to a first block in the first zone, and
- replace at least one of the logical address or the first block with a logical address or a block of a second zone of the plurality of zones, the second zone different from the first zone.
An operation method of a storage device, comprising:
- dividing a plurality of blocks included in a non-volatile memory into a plurality of zones;
- receiving a logical address from a host;
- determining a first zone of the plurality of zones corresponding to the logical address, based on a bit value of the logical address;
- mapping the logical address to a physical address corresponding to a first block of the first zone;
- and
- replacing at least one of the logical address or the first block with a logical address or block of a second zone of the plurality of zones, based on an erase count value of the first block, the second zone different from the first zone.
A storage device comprising:
- processing circuitry configured to,
- store a plurality of address mapping tables that correspond to a plurality of zones divided from a plurality of blocks of a non-volatile memory and store mapping information of a logical address and a physical address,
- perform wear leveling by replacing a block having a highest erase count value in a first zone of the plurality of zones with a block having a lowest erase count value in a second zone of the plurality of zones,
- determine the first zone or the second zone corresponding to each logical address based on a bit value of the logical address, and
- update a first address mapping table of the plurality of address mapping tables corresponding to the first zone, and a second address mapping table of the plurality of address mapping tables corresponding to the second zone, by reflecting a result of the wear leveling.
Dependencies are inferred from the claim text.