Memory device and memory system
AssigneeSamsung Electronics Co., Ltd.
InventorsKi-Heung Kim, ChangSik Yoo, Jeongdon Ihm, Hyongryol Hwang
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Abstract
A memory device includes at least one bank including at least a first sub-bank and a second sub-bank disposed in a wordline direction. The first sub-bank may include a normal data region connected to a plurality of first wordlines and storing normal data, the second sub-bank may include a metadata region connected to a plurality of second wordlines and storing metadata corresponding to the normal data, the plurality of first wordlines may match the plurality of second wordlines to form a plurality of wordline pairs, and the first sub-bank and the second sub-bank may share a row hammer region storing a number of access times to the plurality of wordline pairs.
Claims20
A memory device comprising at least one bank, the at least one bank comprising:
- a first sub-bank comprising:
- a plurality of first wordlines extending in a first direction;
- and
- a normal data region connected to the plurality of first wordlines, the normal data region configured to store normal data,
- a second sub-bank comprising:
- a plurality of second wordlines extending in the first direction;
- and
- a metadata region connected to the plurality of second wordlines, the metadata region configured to store metadata of the normal data,
- wherein the plurality of first wordlines and the plurality of second wordlines are matched to form a plurality of wordline pairs, and
- wherein the at least one bank further comprises a row hammer region shared by the first sub-bank and the second sub-bank, the row hammer region configured to store a number of times the plurality of wordline pairs are accessed.
A memory device comprising at least one bank, the at least one bank comprising:
- a first sub-bank comprising:
- a plurality of first wordlines extending in a wordline direction;
- and
- a plurality of first mats;
- and
- a second sub-bank comprising:
- a plurality of second wordlines;
- and
- a plurality of second mats;
- a first row decoder connected to the first sub-bank through the plurality of first wordlines;
- a plurality of first column select lines;
- a plurality of second column select lines;
- a first column decoder connected to the first sub-bank through the plurality of first column select lines;
- a second row decoder connected to the second sub-bank through the plurality of second wordlines;
- and
- a second column decoder connected to the second sub-bank through the plurality of second column select lines,
- wherein
- each mat of the plurality of first mats comprises a normal data region connected to a portion of the plurality of first wordlines, the normal data region configured to store normal data,
- each mat of the plurality of second mats comprises a metadata region connected to a portion of the plurality of second wordlines, the metadata region configured to store metadata corresponding to the normal data,
- the plurality of first wordlines and the plurality of second wordlines are matched to form a plurality of wordline pairs, and
- at least one of the plurality of first mats included in the first sub-bank comprises one or more count cells configured to store count data, the count data comprising a number of accesses to the plurality of wordline pairs.
A memory system comprising:
- a memory device comprising at least one bank, the at least one bank comprising:
- a first sub-bank comprising:
- a plurality of first wordlines;
- and
- a normal data region connected to the plurality of first wordlines;
- and
- a second sub-bank comprising:
- a plurality of second wordlines;
- and
- a metadata region connected to the plurality of second wordlines, the metadata region being configured to store metadata corresponding to the normal data;
- and
- a memory controller configured to control the memory device,
- wherein the plurality of first wordlines and the plurality of second wordlines are matched to form a plurality of wordline pairs, and
- wherein the at least one bank further comprises a row hammer region shared by the first sub-bank and the second sub-bank, the row hammer region configured to store a number of accesses to the plurality of wordline pairs.
Dependencies are inferred from the claim text.