Photonic devices having a field-effect transistor (FET)
AssigneeHewlett Packard Enterprise Development LP
InventorsBassem Tossoun, Geza Kurczveil, Di Liang, Stanley Cheung
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Abstract
Systems and methods are provided for optical devices having a field-effect transistor (FET) for optical tuning. Examples include a device layer formed on a substrate and comprising a first material, and a FET formed on the substrate. The MOSFET comprises a drain formed in the device layer comprising a first doped region, a source formed in the device layer comprising a second doped region, a gate comprising a second material formed on the device layer, and a conductive channel formed in the device layer based on a voltage bias applied to the gate. An optical waveguide is formed between the gate and the conductive channel.
Claims20
An optical device comprising:
- a substrate;
- a device layer formed on the substrate and comprising a first material;
- a metal-oxide-semiconductor field-effect transistor (MOSFET) formed on the substrate, the MOSFET comprising:
- a drain formed in the device layer comprising a first doped region;
- a source formed in the device layer comprising a second doped region;
- a gate comprising a second material formed on the device layer;
- and
- a conductive channel formed in the device layer based on a voltage bias applied to the gate;
- and
- a first optical waveguide formed between the gate and the conductive channel.
A method, comprising:
- applying a first voltage bias between a drain and a source of a metal-oxide-semiconductor field-effect transistor (MOSFET);
- forming a conductive channel between the drain and the source by applying a second voltage bias between the source and a gate of the MOSFET, wherein a first waveguide is between the gate and the conductive channel;
- and
- tuning a phase of the first waveguide based on adjusting at least one of the first voltage bias and the second voltage bias, wherein modulation depth of the tuning is based on the conductive channel.
A photonic integrated circuit (PIC) comprising:
- a device layer comprising a first material;
- a first capacitive structure comprising a first anode formed in the first material and comprising a first waveguide, a first cathode comprising a second material, and a dielectric layer disposed between the first cathode and the first anode;
- and
- a metal-oxide-semiconductor field-effect transistor (MOSFET) comprising:
- a source and a drain formed in the device layer;
- and
- a gate comprising the cathode,
- wherein a conductive channel is formed in a region of the device layer based a first voltage bias applied to the gate, and
- wherein the first waveguide is between the gate and conductive channel.
Dependencies are inferred from the claim text.