Semiconductor structure and method of fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorFeng-Wei Kuo
Life of this patent
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Abstract
A semiconductor structure includes a substrate and a metal layer disposed in the substrate. The semiconductor structure includes a dielectric layer disposed over the metal layer. The semiconductor structure further includes a semiconductor layer disposed over the dielectric layer, where the metal layer extends across the semiconductor layer. The semiconductor layer includes a two-dimensional grating coupler including a plurality of scattering elements disposed in the semiconductor layer and a pair of tapered structures extending laterally from the two-dimensional grating coupler.
Claims20
A semiconductor structure, comprising:
- a substrate;
- a metal layer;
- a dielectric layer disposed over the metal layer;
- and
- a semiconductor layer disposed over the dielectric layer, the metal layer extending across the semiconductor layer, the semiconductor layer including:
- a two-dimensional grating coupler including a plurality of scattering elements disposed in the semiconductor layer;
- and
- a pair of tapered structures extending laterally from the two-dimensional grating coupler;
- wherein the metal layer extends over an entirety of a region over which the two-dimensional grating coupler and the pair of tapered structures are disposed,
- wherein the scattering elements are arranged in an apodized pattern.
A semiconductor structure, comprising:
- a first semiconductor layer;
- a metal layer;
- a dielectric layer disposed over the metal layer;
- and
- a second semiconductor layer disposed over the dielectric layer, including:
- a grating coupler having a plurality of scattering elements arranged in an apodized pattern;
- a pair of tapered structures extending from the grating coupler;
- and
- a pair of waveguides, wherein each tapered structure couples the grating coupler to a corresponding waveguide;
- wherein the metal layer extends over an entirety of a region over which the grating coupler, the pair of tapered structures, and the pair of waveguides are disposed.
A semiconductor structure, comprising:
- a first semiconductor layer;
- a metal layer;
- a dielectric layer disposed over the metal layer;
- a second semiconductor layer disposed over the dielectric layer, including a two-dimensional grating coupler formed by two single-polarization grating couplers disposed substantially perpendicular to each other, wherein each single-polarization grating coupler includes a set of curved grating lines;
- a pair of tapered structures extending from the two-dimensional grating coupler;
- wherein the metal layer extends over an entirety of a region over which the two-dimensional grating coupler and the pair of tapered structures are disposed.
Dependencies are inferred from the claim text.