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US 12,748,256 B2Granted
Optical devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Chung-Hao Tsai, Chieh-Yen Chen
Life of this patent
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Abstract
Optical devices are presented herein. In an embodiment, the optical devices comprise a first active layer of first optical components, a first metallization layer over the first active layer, a first capacitor located within the first metallization layer, a first bond layer over the first metallization layer, and a first semiconductor device bonded to the first bond layer.
Claims20
A semiconductor device comprising:
- a first optical structure comprising:
- a first active layer of first optical components;
- a first metallization layer over the first active layer;
- a first capacitor located within the first metallization layer;
- a first bond layer over the first metallization layer;
- and
- a first semiconductor device bonded to the first bond layer;
- a second optical structure comprising:
- a second active layer of second optical components;
- a second metallization layer over the second active layer;
- a second capacitor located within the second metallization layer;
- a second bond layer over the second metallization layer;
- and
- a second semiconductor device bonded to the second bond layer;
- a capacitor structure bonded to both the first optical structure and the second optical structure, wherein the first capacitor is between the first semiconductor device and the capacitor structure and wherein the second capacitor is between the second semiconductor device and the capacitor structure, the capacitor structure comprising:
- a third semiconductor substrate;
- a deep trench capacitor extending into the semiconductor substrate;
- and
- a third metallization layer over the third semiconductor substrate, the third metallization layer comprising third optical components.
16 more elements
A semiconductor device comprising:
- a capacitor structure comprising:
- a semiconductor substrate;
- and
- a deep trench capacitor extending into the semiconductor substrate;
- a first optical device comprising:
- a first semiconductor device bonded to a first bond layer;
- a first metallization layer on an opposite side of the first bond layer from the first semiconductor device;
- a first active layer of first optical components on an opposite side of the first metallization layer from the first bond layer;
- and
- a first capacitor between the first semiconductor device and the capacitor structure;
- and
- a second optical device comprising:
- a second semiconductor device bonded to a second bond layer;
- a second metallization layer on an opposite side of the second bond layer from the second semiconductor device;
- a second active layer of second optical components on an opposite side of the second metallization layer from the second bond layer;
- and
- a second capacitor between the second semiconductor device and the capacitor structure.
14 more elements
A semiconductor device comprising:
- an interposer structure, the interposer structure comprising;
- a semiconductor substrate;
- a deep trench capacitor extending into the semiconductor substrate;
- and
- a metallization layer over the semiconductor substrate, the metallization layer comprising first optical components;
- a first optical structure bonded to the interposer structure, the first optical structure comprising:
- a first semiconductor device;
- a first active layer of first optical components;
- a first metallization layer between the first semiconductor device and the first active layer;
- and
- a first capacitor between the first semiconductor device and the interposer structure;
- and
- a second optical structure bonded to the interposer structure, the second optical structure comprising:
- a second semiconductor device;
- a second active layer of second optical components;
- a second metallization layer between the second semiconductor device and the second active layer;
- and
- a second capacitor between the second semiconductor device and the interposer structure.
15 more elements
Dependencies are inferred from the claim text.