Magnetic field enhancement assembly and magnetic field enhancement device

A magnetic field enhancing component, comprising:

• a first dielectric layer comprising a first surface and a second surface arranged opposite to each other;
• a first electrode layer arranged on the first surface and covering part of the first surface;
• a second electrode layer arranged on the second surface and covering part of the second surface, wherein an orthographic projection of the first electrode layer projected onto the first dielectric layer overlaps an orthographic projection of the second electrode layer projected onto the first dielectric layer to form a first structural capacitor;
• a third electrode layer arranged on the first surface and spaced apart from the first electrode layer, and the third electrode layer covering part of the first surface, and the second electrode layer being electrically connected to the third electrode layer;
• and
• a first external capacitor, a second external capacitor and a first switching control circuit;
• wherein one terminal of the second external capacitor is connected to the second electrode layer, and another terminal of the second external capacitor is connected to one terminal of the first external capacitor and one terminal of the first switching control circuit, respectively;
• another terminal of the first external capacitor and another terminal of the first switching control circuit each are connected to the first electrode layer;
• and
• the first switching control circuit is configured to be turned on in an RF transmitting period and to be turned off in an RF receiving period.

A magnetic field enhancing component, comprising:

• a first dielectric layer comprising a first surface and a second surface opposite to each other;
• a first electrode layer arranged on the first surface;
• a second electrode layer and a fourth electrode layer, which are arranged on the second surface at an interval;
• wherein orthographic projections of the first electrode layer and the second electrode layer, which are projected onto the first dielectric layer, overlap each other, and orthographic projections of the first electrode layer and the fourth electrode layer, which are projected onto the first dielectric layer, overlap each other;
• and
• a third external capacitor, two terminals of the third external capacitor being connected to the first electrode layer and the second electrode layer, respectively;
• and
• a fourth external capacitor and a second switching control circuit, wherein one terminal of the fourth external capacitor is connected to the second electrode layer;
• an other terminal of the fourth external capacitor is connected to one terminal of the second switching control circuit;
• another terminal of the second switching control circuit is connected to the first electrode layer;
• and the second switching control circuit is configured to be turned on in an RF transmitting period and to be turned off in an RF receiving period;
• the second switching control circuit comprises:
• a third diode, an anode of the third diode being connected to the first electrode layer;
• and
• a fourth diode, a cathode of the fourth diode being connected to the first electrode layer;
• wherein the other terminal of the fourth external capacitor is connected to a cathode of the third diode and an anode of the fourth diode, respectively.