Selective etching solution for 3D NAND structure sheet
AssigneeHubei Sinophorus Electronic Materials Co., Ltd.
InventorsShaoping Li, Zhaobo He, Fan Feng, Rui Ye, Ting Zhang, Changsheng Ban, Kai Feng, Shuping Wang, Fei Peng
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Abstract
A selective etching solution for a 3D NAND structure sheet is provided. The etching solution includes phosphoric acid, a silane additive 1, a silane additive 2, and water. The etching solution provided by the present invention has etching selectivity on a silicon oxide film and a silicon nitride film, can selectively remove the silicon nitride film and prolong the life of the etching solution, and can adapt to etching of a laminated structure.
Claims11
A selective etching solution for a 3D NAND structure sheet, the selective etching solution comprising the following raw materials in parts by mass:
- 1.5-2.0% of a silane coupling agent 1,
- 2.0-2.5% of a silane coupling agent 2,
- 83-86% of a phosphoric acid and a balance of water;
- wherein the silane coupling agent 1 is 3-glycidyloxypropyltrimethoxysilane, diethoxy(3-glycidyloxypropyl)methylsilane or triethoxy(3-epoxy propyl oxypropyl)silane;
- and the silane coupling agent 2 is 2-cyanoethyltriethoxysilane, isocyanatopropyltriethoxysilane or ureapropyl triethoxysilane.
Dependencies are inferred from the claim text.