Use of a flat glass in electronic components

A method of producing an electronic component selected from a limited group the method comprising:

• providing flat glass comprising silicon oxide, boron oxide, aluminum oxide, sodium oxide, potassium oxide and lithium oxide in the following amounts:
• SiO2
• 72 mol % to 85 mol %,
• B2O3
• 10 mol % to 25 mol %,
• Al2O3
• 0.2 mol % to 2.5 mol %,
• Na2O
• 1.1 mol % to 2.8 mol %,
• K2O
• 0 mol % to 1.0 mol %, and
• Li2O
• 0 mol % to 1.5 mol %,
• wherein the Na2O, K2O, and Li2O amount to less than 5 mol % in total,
• wherein the flat glass has a ratio of weight fractions of ions of iron that satisfies the equation 0.1≤Fe2+/(Fe2++Fe3+)≤0.3, and wherein the flat glass has a dielectric constant of 4.3 or less and has a dielectric loss factor of 0.004 or less at 5 GHZ;
• configuring the flat glass as one of an interposer, a substrate, or a superstrate;
• and
• forming the flat glass into the electronic component, wherein the electronic component is selected from the limited group consisting of an antenna, a patch antenna, an array of antennas, a phase shifter element, and a liquid crystal-based phase shifter element,
• wherein the flat glass, at a thickness of 1 mm, exhibits a first transmittance to electromagnetic radiation at a wavelength of 254 nm of 20% or more, exhibits a second transmittance to electromagnetic radiation at a wavelength of 300 nm of 82% or more, and exhibits a third transmittance to electromagnetic radiation at a wavelength of 350 nm of 90% or more, and
• wherein the flat glass has a native surface, and wherein the third transmittance is 91% or more.