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US 12,746,501 B2Granted
Exhaust system and exhaust method using buffer
AssigneeSamsung Electronics Co., Ltd.
InventorChangseok Yoo
Life of this patent
Estimating the term…
Abstract
An exhaust system including a process chamber in which a semiconductor processing is performed, a buffer connected to the process chamber, the buffer configured to receive waste gas generated during the semiconductor processing and dualize and disperse powder generated from the waste gas may be provided, a reactor configured to burn the waste gas, a wet tank connected to the reactor, arranged below the reactor, and configured to store cleaning water, and a wet tower configured to decompose the powder in the waste gas by using the cleaning water may be provided.
Claims18
An exhaust system comprising:
- a process chamber in which a semiconductor processing is performed;
- a buffer connected to the process chamber, the buffer configured to receive waste gas generated during the semiconductor processing and dualize powder generated from the waste gas into a first powder having a relatively small particle size and a second powder having a relatively large particle size, the buffer including an internal space divided into a lower internal space and an upper internal space, the buffer further including an inlet, a first outlet, and a second outlet, the inlet being on one side of the buffer, the first outlet and the second outlet being on upper and lower portions of an opposite side of the buffer, respectively, the first outlet in communication with the upper internal space of the internal space and configured to output the first powder and the second outlet in communication with the lower internal space of the internal space and configured to output the second powder;
- a reactor configured to burn the waste gas;
- a wet tank connected to the reactor, arranged below the reactor, and configured to store cleaning water;
- and
- a wet tower configured to decompose the powder in the waste gas by using the cleaning water.
3 more elements
An exhaust system comprising:
- a process chamber in which a semiconductor processing is performed;
- a buffer connected to the process chamber and configured to receive gas generated during the semiconductor processing, the buffer including a lower internal space and an upper internal space;
- a first reactor configured to heat-treat and burn the waste gas;
- a plurality of valves between the buffer and the first reactor;
- a wet tank connected to the first reactor, arranged below the first reactor, and configured to store cleaning water;
- a wet tower configured to perform a cleaning treatment on the waste gas by using the cleaning water;
- and
- a controller configured to control opening and closing of the plurality of valves, the plurality of valves including a first valve and a second valve,
- wherein the buffer comprises a first outlet in communication with the upper internal space and a second outlet in communication with the lower internal space, and is further configured to dualize powder generated from the waste gas, and
- the plurality of valves comprise the first valve configured to adjust a first fluid flow between the first outlet and the first reactor and the second valve configured to adjust a second fluid flow between the second outlet and the first reactor.
7 more elements
An exhaust method comprising:
- performing a semiconductor processing;
- supplying waste gas generated during the semiconductor processing to a buffer;
- dualizing powder in the waste gas by using the buffer, wherein the dualizing comprises dualizing the powder generated from the waste gas into a first powder having a relatively small particle size and a second powder having a relatively large particle size;
- supplying the waste gas, the first powder, and the second powder to at least one reactor;
- performing heat treatment on the waste gas that has been supplied;
- and
- cleaning the waste gas that has been heat-treated by using a cleaning water.
4 more elements
Dependencies are inferred from the claim text.