Substrate and method of manufacturing the same

A method of manufacturing a substrate, the method comprising:

• stacking a first insulating layer;
• forming a second insulating layer on the first insulating layer, the second insulating layer having a thickness less than a thickness of the first insulating layer;
• forming a sub-hole by primarily removing the second insulating layer and the first insulating layer by emitting a first laser;
• and
• forming a via hole by secondarily removing the second insulating layer and the first insulating layer by emitting a second laser different from the first laser,
• wherein the forming of the via hole comprises forming a lower hole in the first insulating layer and an upper hole in the second insulating layer to connect the upper and lower holes to each other,
• wherein a width of an upper side of the lower hole is larger than a width of a lower side of the lower hole, and a width of an upper side of the upper hole is smaller than a width of a lower side of the upper hole, and
• wherein the width of the upper side of the lower hole is equal to the width of the lower side of the upper hole.

A substrate comprising:

• at least one insulating layer including a first insulating layer and a second insulating layer stacked on one another;
• a lower conductive pattern and an upper conductive pattern disposed at a lower portion and an upper portion of the at least one insulating layer, respectively;
• and
• a connection conductive pattern penetrating through the at least one insulating layer to be connected to the lower and upper conductive patterns,
• wherein a width of a middle portion of the connection conductive pattern is larger than widths of upper and lower portions of the connection conductive pattern,
• wherein the connection conductive pattern includes a lower connection conductive pattern and an upper connection conductive pattern extended from the lower connection conductive pattern,
• wherein a width of an upper side of the lower connection conductive pattern is larger than a width of a lower side of the lower connection conductive pattern, and a width of an upper side of the upper connection conductive pattern is smaller than a width of a lower side of the upper connection conductive pattern,
• wherein the width of the upper side of the lower connection conductive pattern is equal to the width of the lower side of the upper connection conductive pattern,
• wherein the lower connection conductive pattern is disposed in the first insulating layer and the upper connection conductive pattern is disposed in the second insulating layer, and
• wherein a thickness of the first insulating layer is greater than a thickness of the second insulating layer.