High frequency transistor

A high frequency transistor comprising:

• a semiconductor substrate;
• a plurality of unit transistors provided on the semiconductor substrate and connected in parallel to one another;
• a plurality of capacitors respectively connected to gate electrodes of the plurality of unit transistors;
• a plurality of resistors respectively connected to the plurality of capacitors in parallel;
• first and second pads provided on an upper surface of the semiconductor substrate and respectively connected to one end and the other end of the resistor connected to at least the unit transistor in the center among the plurality of unit transistors arranged in a row;
• a silicon substrate arranged above the semiconductor substrate;
• first and second conductors provided on the silicon substrate;
• a first bump connecting the first pad and one end of the first conductor;
• and
• a second bump connecting the second pad and one end of the second conductor,
• wherein the other end of the first conductor and the other end of the second conductor are set in contact with the silicon substrate and are separated from and face each other.