Electronic devices and methods of manufacturing electronic devices

An electronic device, comprising:

• a first substrate comprising a first dielectric structure and a first conductive structure;
• a first interconnect structure over a top side the first substrate and coupled with the first conductive structure;
• a first encapsulant over the first substrate and contacting a lateral side of the first interconnect structure;
• a second substrate over the first encapsulant and comprising a second dielectric structure and a second conductive structure, wherein the second conductive structure is coupled with the first interconnect structure;
• a first electronic component over a top side of the second substrate and coupled with the second conductive structure;
• a second electronic component coupled with the second conductive structure;
• and
• a second encapsulant over the top side of the second substrate and contacting a lateral side of the first electronic component;
• wherein the first interconnect structure comprises:
• an interconnect encapsulant;
• and
• a metal interconnect bounded by the interconnect encapsulant.

A method to manufacture an electronic device, comprising:

• providing a first interconnect structure;
• providing a first encapsulant contacting a lateral side of the first interconnect structure;
• providing a first substrate coupled with a first side of the first encapsulant, wherein the first substrate comprises a first dielectric structure and a first conductive structure, and wherein the first conductive structure is coupled with the first interconnect structure;
• providing a second substrate coupled with a second side of the first encapsulant, wherein the second substrate comprises a second dielectric structure and a second conductive structure, and wherein the second conductive structure is coupled with the first interconnect structure;
• and
• providing a first electronic component coupled with the first substrate;
• wherein the first electronic component is coupled with the second conductive structure via the first interconnect structure and the first conductive structure;
• and
• wherein the first interconnect structure comprises:
• an interconnect encapsulant;
• and
• a metal interconnect bounded by the interconnect encapsulant.