Power semiconductor module and manufacturing method thereof

A motor driver, comprising a capacitor and a power semiconductor module, wherein an electrode terminal of the power semiconductor module is electrically connected to the capacitor, wherein the power semiconductor module comprises at least one heat sink and at least one power semiconductor package, and a thermal conductive layer, wherein:

• the thermal conductive layer is located between the heat sink and the power semiconductor package, and the thermal conductive layer is a thermal conductive material having metal bonding wires on a surface or a solid-state thermal conductive layer formed by curable silicone grease;
• and
• both the power semiconductor package and the heat sink are combined with the thermal conductive layer to form the power semiconductor module;
• wherein each power semiconductor package at least comprises a first substrate, a second substrate, and at least one chip, and the chip is fastened between the first substrate and the second substrate;
• the at least one chip is electrically connected to the first substrate and the second substrate;
• and
• the thermal conductive layer is disposed between the heat sink and the first substrate and/or between the heat sink and the second substrate;
• wherein the chip comprises an insulated gate bipolar transistor chip and a diode chip;
• or
• the chip comprises a silicon metal-oxide-semiconductor field-effect transistor or a silicon carbide metal-oxide-semiconductor field-effect transistor;
• and
• the power semiconductor package further comprises:
• at least one conductive pad, and the conductive pad is located between the chip and the first substrate;
• and
• two ends of the conductive pad are respectively connected to the chip and the first substrate by using conductive connecting layers.

A method for manufacturing a power semiconductor module, the method comprising:

• providing at least one power semiconductor package and a heat sink;
• separately disposing an interface material on a top surface and/or a bottom surface of the power semiconductor package, wherein the interface material is a thermal conductive material having metal bonding wires on a surface, or the interface material is curable silicone grease;
• and
• press-fitting, for preset time at a preset temperature and preset pressure, the power semiconductor package on which the interface material is disposed with the heat sink, to form the power semiconductor module.