Embedding a metal-insulator-metal capacitor in a passivation layer

A device, comprising:

• a first passivation layer disposed over an interconnect structure;
• a second passivation layer disposed over the first passivation layer;
• a first metal-insulator-metal (MIM) capacitor disposed between the first passivation layer and the second passivation layer, wherein the first MIM capacitor includes a downward protruding portion that protrudes at least partially through the first passivation layer;
• and
• a second MIM capacitor disposed over the first MIM capacitor, wherein the second MIM capacitor lacks a downwardly protruding portion.

A method, comprising:

• forming a passivation layer over an interconnect structure;
• etching an opening partially, but not completely, through the passivation layer;
• depositing a first conductive layer over the passivation layer, wherein the first conductive layer partially fills the opening;
• depositing an insulator layer over the first conductive layer, wherein the insulator layer partially fills the opening;
• depositing a second conductive layer over the insulator layer, wherein the second conductive layer completely fills the opening;
• and
• forming a first conductive structure that is electrically coupled to the first conductive layer and forming a second conductive structure that is electrically coupled to the second conductive layer.