Methods and structures for improving etch profile of underlying layers
AssigneeTokyo Electron Limited
InventorsYen-Tien Lu, Shihsheng Chang
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Abstract
Semiconductor devices and corresponding methods of manufacture are disclosed. The method includes forming a first hardmask layer over a substrate, forming a second hardmask layer over the first hardmask layer, etching the second hardmask layer to form a pattern in the second hardmask layer, transferring the pattern to the first hardmask layer, removing the second hardmask layer and trimming an upper portion of the pattern in the first hardmask layer, forming a silicon-containing layer on a top surface of the pattern in the first hardmask layer, and etching the substrate with the pattern in the first hardmask layer and the silicon-containing layer both serving as a mask.
Claims20
A method for fabricating semiconductor devices, comprising:
- forming a first hardmask layer over a substrate;
- forming a second hardmask layer over the first hardmask layer;
- etching the second hardmask layer to form a pattern in the second hardmask layer;
- transferring the pattern to the first hardmask layer;
- removing the second hardmask layer and trimming an upper portion of the pattern in the first hardmask layer;
- after trimming the upper portion of the pattern in the first hardmask layer, forming a silicon-containing layer on a top surface of the pattern in the first hardmask layer;
- and
- etching the substrate with the pattern in the first hardmask layer and the silicon-containing layer both serving as a mask.
A method for fabricating semiconductor devices, comprising:
- forming a first hardmask layer over a substrate;
- forming a second hardmask layer over the first hardmask layer;
- transferring a pattern of the second hardmask layer to the first hardmask layer;
- removing the second hardmask layer and trimming an upper portion of the pattern in the first hardmask layer;
- after trimming the upper portion of the pattern in the first hardmask layer, forming a third hardmask layer on a top surface of the pattern in the first hardmask layer;
- and
- etching the substrate with the pattern in the first hardmask layer and the third hardmask layer both serving as a mask.
A method for fabricating semiconductor devices, comprising:
- forming an amorphous carbon layer over one or more dielectric layers;
- forming a patterned hardmask layer over the amorphous carbon layer;
- transferring a pattern of the patterned hardmask layer to the amorphous carbon layer;
- removing the patterned hardmask layer and trimming an upper portion of the pattern in the amorphous carbon layer;
- after trimming the upper portion of the pattern in the amorphous carbon layer, forming a silicon-containing layer on a top surface of the pattern in the amorphous carbon layer;
- and
- etching the one or more dielectric layers with the pattern in the amorphous carbon layer and the silicon-containing layer both serving as a mask.
Dependencies are inferred from the claim text.