Light-emitting device and method for manufacturing the same, display substrate

A method for manufacturing a light-emitting device, the method comprising:

• forming a first electrode;
• forming an electron transport layer on the first electrode;
• forming a light-emitting layer on the electron transport layer;
• forming a hole transport layer on the light-emitting layer;
• and
• forming a second electrode on the hole transport layer, wherein
• the electron transport layer includes at least one electron transport sub-layer;
• in the at least one electron transport sub-layer, an electron transport sub-layer closest to the light-emitting layer is an electron transport sub-layer with a C-axis orientation;
• and in the electron transport sub-layer with the C-axis orientation, in a direction perpendicular to a plane where the light-emitting layer is located, a ratio of a number of crystal grains having no overlap with adjacent crystal grains to a total number of crystal grains is greater than 85%.

A method for manufacturing a light-emitting device, the method comprising:

• forming a second electrode;
• forming a hole transport layer on the second electrode;
• forming a light-emitting layer on the hole transport layer;
• forming an electron transport layer on the light-emitting layer;
• and
• forming a first electrode on the electron transport layer, wherein
• the electron transport layer includes at least one electron transport sub-layer;
• in the at least one electron transport sub-layer, an electron transport sub-layer closest to the light-emitting layer is an electron transport sub-layer with a C-axis orientation;
• and in the electron transport sub-layer with the C-axis orientation, in a direction perpendicular to a plane where the light-emitting layer is located, a ratio of a number of crystal grains having no overlap with adjacent crystal grains to a total number of crystal grains is greater than 85%.