Image sensor architectures that employ multi-potential dynamic substrate biasing

An image sensor, comprising:

• at least one substrate;
• and
• a set of pixels on the at least one substrate, a pixel in the set of pixels including,
• a first substrate portion of the at least one substrate;
• a second substrate portion of the at least one substrate, the second substrate portion electrically isolated from the first substrate portion;
• a third substrate portion of the at least one substrate, the third substrate portion electrically isolated from the first substrate portion and the second substrate portion;
• a first photodiode;
• a second photodiode;
• a charge storage node;
• a first charge transfer gate on and biased by the first substrate portion, the charge transfer gate operable to selectively couple the first photodiode to the charge storage node;
• a second charge transfer gate on and biased by the third substrate portion, the second charge transfer gate operable to selectively couple the second photodiode to the charge storage node;
• and
• at least one transistor on and biased by the second substrate portion.

An image sensor, comprising:

• a semiconductor substrate;
• a pixel including,
• a photodiode;
• a charge storage node;
• and
• a charge transfer gate disposed on and biased by a potential of the semiconductor substrate, the charge transfer gate operable to selectively connect the photodiode to the charge storage node;
• and
• a control circuit operable to:
• dynamically bias the potential of the semiconductor substrate to a first potential during a charge transfer mode in which charge is transferred from the photodiode to the charge storage node;
• dynamically bias the potential of the semiconductor substrate to a second potential different from the first potential during a readout mode in which charge is read from the charge storage node;
• and
• dynamically bias the potential of the semiconductor substrate to a third potential different from the first potential and the second potential during at least an integration mode of operation of the pixel in which charge is integrated by the photodiode.