Support substrate for passive electronic component, passive electronic component, semiconductor device, matching circuit, and filter circuit

Abstract

A support substrate for a passive electronic component, the support substrate including: a semiconductor substrate; a charge trap layer on the semiconductor substrate and having a higher crystal defect density than the semiconductor substrate; and an insulating layer on the charge trap layer. In a first aspect, the insulating layer is composed of silicon nitride, and an atomic concentration ratio of N to a total amount of Si and N in the insulating layer is not greater than 45 atom %. In a second aspect, the insulating layer includes a first insulating layer on the charge trap layer; and a second insulating layer on the first insulating layer, wherein a first fixed charge within the first insulating layer and a second fixed charge within the second insulating layer have opposite polarities, and the first insulating layer has a thickness of not less than 0.5 nm and not greater than 3 nm.

Dependencies are inferred from the claim text.