System and methods of manufacturing semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ao Chang, Pei-Ren Jeng, Chii-Horng Li, Yee-Chia Yeo
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Abstract
A system and methods of manufacturing semiconductor devices is described herein. The method includes forming a recess between fins in a substrate and forming a dielectric layer over the fins and in the recess. Once the dielectric layer has been formed, a bottom seed structure is formed over the dielectric layer within the recess and the dielectric layer is exposed along sidewalls of the recess. A dummy gate material is grown from the bottom seed structure in a bottom-up deposition process without growing the dummy gate material from the dielectric layer exposed along sidewalls of the recess.
Claims20
A semiconductor device comprising:
- a recess between fins in a substrate;
- a dielectric layer over the fins and along a bottom of the recess, wherein the dielectric layer has a first thickness over the fins and a second thickness 5 to 100 times greater than the first thickness at the bottom of the recess;
- a bottom seed structure at the bottom of the recess directly on the dielectric layer;
- and
- a dummy gate material extending from the bottom seed structure to a top of the recess.
A semiconductor device comprising:
- a trench between fins in a semiconductor substrate;
- a gate dielectric material along a bottom of the trench and over the fins, wherein the gate dielectric material has a first thickness at the bottom of the trench and a second thickness over the fins, wherein the first thickness is greater than the second thickness;
- a first silicon material over the gate dielectric material;
- and
- a second silicon material over the first silicon material, wherein the second silicon material completely fills the trench without any voids in the second silicon material.
A semiconductor device comprising:
- a structure having a trench extending into the structure from an upper surface of the structure;
- a gate dielectric material layer along sidewalls and along a bottom of the trench, wherein the gate dielectric material layer has a first thickness at the bottom of the trench and a second thickness over the upper surface of the structure, wherein the first thickness is greater than the second thickness;
- a first silicon material layer over the gate dielectric material layer;
- and
- a second silicon material layer over the first silicon material layer, wherein the second silicon material layer completely fills remaining portions of the trench without any voids in the second silicon material layer.
Dependencies are inferred from the claim text.