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US 12,745,397 B2Granted
Semiconductor device and manufacturing method of the semiconductor device
AssigneeSK hynix Inc.
InventorsEun Seok Choi, Jae Young Oh
Life of this patent
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Abstract
A semiconductor device includes a gate structure including drain select lines and word lines, source patterns, and source select lines located between the gate structure and the source patterns. The semiconductor device also includes a first isolation structure extending between the source patterns and between the source select lines, a second isolation structure extending between the drain select lines, and channel structures extending into the source patterns through the gate structure and the source select lines.
Claims20
A semiconductor device comprising:
- a gate structure including drain select lines and word lines;
- source patterns;
- source select lines located between the gate structure and the source patterns;
- a first isolation structure extending between the source patterns and between the source select lines;
- a second isolation structure extending between the drain select lines;
- and
- channel structures extending into the source patterns through the gate structure and the source select lines,
- wherein the word lines are disposed between the first isolation structure and the second isolation structure.
5 more elements
A semiconductor device comprising:
- a gate structure including drain select lines and word lines;
- source patterns;
- source select lines located between the gate structure and the source patterns;
- a first isolation structure extending between the source patterns and between the source select lines;
- a second isolation structure extending between the drain select lines;
- channel structures extending into the source patterns through the gate structure and the source select lines;
- and
- a slit structure extending through the gate structure and connected to the first isolation structure.
5 more elements
A semiconductor device comprising:
- drain select lines;
- word lines stacked over the drain select lines;
- source patterns disposed over the word lines and including first sidewalls;
- source select lines located between the word lines and the source patterns and including second sidewalls aligned with the first sidewalls;
- a first isolation structure extending between the source patterns and between the source select lines, wherein the first isolation structure is disposed over the word lines;
- and
- channel structures extending into the source patterns through the drain select lines, the word lines, and the source select lines.
4 more elements
Dependencies are inferred from the claim text.