Heterostructure and method of fabrication
AssigneeSoitec
InventorsArnaud Castex, Daniel Delprat, Bernard Aspar, Ionut Radu
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Abstract
The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
Claims18
A surface acoustic wave device, comprising:
- a high-resistivity silicon support substrate;
- a piezoelectric material bonded over a top surface of the high-resistivity silicon support substrate;
- and
- a charge trapping layer comprising poly-crystalline silicon disposed on the high-resistivity silicon support substrate.
A method of forming a surface acoustic wave device, the method comprising:
- providing a high-resistivity silicon support substrate;
- disposing a functional layer as a poly-crystalline silicon layer on the high-resistivity silicon support substrate to form a charge trapping layer;
- and
- bonding a piezoelectric material over a top surface of the high-resistivity silicon support substrate.
Dependencies are inferred from the claim text.