Substrate processing apparatus, method of manufacturing semiconductor device and plasma generating apparatus
AssigneeKokusai Electric Corporation
InventorsTsuyoshi Takeda, Daisuke Hara
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Abstract
According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a gas supplier through which a process gas is supplied to the process chamber; a plasma generator provided so as to protrude into the process chamber, constituted by a coil and an insulator, and configured to generate a plasma of the process gas in the process chamber; and an adjuster capable of adjusting a gap distance between the coil and the insulator.
Claims19
A substrate processing apparatus comprising:
- a process chamber in which a substrate is processed;
- a gas supplier through which a process gas is supplied to the process chamber;
- a plasma generator including an insulator provided with a curved surface so as to protrude into the process chamber, and a coil having a shape that approximately fits into the curved surface of the insulator, and configured to generate a plasma of the process gas in the process chamber;
- an adjuster capable of adjusting a gap distance between the coil and the insulator;
- and
- a shield arranged above the coil to cover the coil, wherein the shield comprises:
- a first shield arranged so as to cover an upper side of the coil;
- and
- a second shield provided inside the plasma generator, wherein the second shield is provided between opposite ends of the coil.
A method of manufacturing a semiconductor device, comprising:
- (a) loading a substrate into a process chamber of a substrate processing apparatus, wherein the substrate processing apparatus comprises:
- the process chamber in which the substrate is processed;
- a gas supplier through which a process gas is supplied to the process chamber;
- a plasma generator including an insulator provided with a curved surface so as to protrude into the process chamber, and a coil having a shape that approximately fits into the curved surface of the insulator, and configured to generate a plasma of the process gas in the process chamber;
- a shield arranged above the coil to cover the coil, wherein the shield comprises:
- a first shield arranged so as to cover an upper side of the coil;
- and
- a second shield provided inside the plasma generator, wherein the second shield is provided between opposite ends of the coil;
- and
- an adjuster capable of adjusting a gap distance between the coil and the insulator;
- and
- (b) generating the plasma of the process gas in the process chamber by the plasma generator.
A plasma generating apparatus comprising:
- a plasma generator including an insulator provided with a curved surface so as to protrude into a process chamber in which a substrate is processed, and a coil having a shape that approximately fits into the curved surface of the insulator, and configured to generate a plasma of a process gas in the process chamber;
- a shield arranged above the coil to cover the coil, wherein the shield comprises:
- a first shield arranged so as to cover an upper side of the coil;
- and
- a second shield provided inside the plasma generator, wherein the second shield is provided between opposite ends of the coil;
- and
- an adjuster capable of adjusting a gap distance between the coil and the insulator.
Dependencies are inferred from the claim text.