Nonvolatile memory device and operating method based on program execution and/or erase execution time

A method of operating a storage device including a NAND flash memory device and a storage controller configured to control the NAND flash memory device, comprising:

• generating degeneration information indicating at least one of a program execution time required to perform a write operation and an erase execution time required to perform an erase operation of the NAND flash memory device;
• providing the degeneration information from the NAND flash memory device to the storage controller;
• and
• controlling the NAND flash memory device to adjust at least one of a program voltage of the write operation and an erase voltage of the erase operation based on the degeneration information,
• wherein the controlling the NAND flash memory device comprises adjusting the program voltage to a first voltage level based on the program execution time indicated by the degeneration information being within a first interval, and adjusting the program voltage to a second voltage level different from the first voltage level based on the program execution time indicated by the degeneration information being within a second interval different from the first interval.

A NAND flash memory device comprising:

• a memory cell array comprising a plurality of nonvolatile memory cells;
• command-address pins configured to communicate a command and an address for a write operation or an erase operation;
• data pins configured to communicate write data and readout data;
• a state pin configured to communicate a state signal that is activated at a first logic level indicating a ready state while in the ready state and deactivated at a second logic level indicating a busy state while performing internal operations for the write operation or the erase operation;
• and
• a degeneration detector circuit configured to generate degeneration information indicating at least one of a program execution time to perform the write operation and an erase execution time to perform the erase operation, based on the state signal,
• wherein the NAND flash memory device is configured to adjust a program voltage to a first voltage level based on the program execution time indicated by the degeneration information being within a first interval, and adjust the program voltage to a second voltage level different from the first voltage level based on the program execution time indicated by the degeneration information being within a second interval different from the first interval.