Non-volatile memory with location dependent bitline voltage during program-verify for current sensing compensation

A non-volatile storage apparatus, comprising:

• NAND strings comprising non-volatile memory cells and select gates, the NAND strings are grouped into a plurality of blocks;
• a plurality of word lines connected to the non-volatile memory cells;
• a plurality of bit lines connected to the NAND strings, each of the bit lines are connected to NAND strings in multiple regions of every block of the plurality of blocks;
• a plurality of select lines connected to the select gates;
• and
• a control circuit connected to the word lines and the select lines, the control circuit includes bit line drivers connected to the bit lines, the control circuit is configured to program the non-volatile memory cells into a set of data states defined by current distributions such that memory cells targeted for a first data state of the set of data states that are positioned in blocks farther from the bit line drivers are intentionally programmed to a higher memory cell current than memory cells targeted for the first data state that are positioned in blocks closer to the bit line drivers by using smaller bit line voltages during program-verify for memory cells positioned in blocks farther from the bit line drivers than bit line voltages used during program-verify for memory cells positioned in blocks closer to the bit line drivers;
• the control circuit is configured to perform in-memory vector-matrix multiplication (VMM) by:
• applying a VMM bit line voltage to selected bit lines of the plurality of bit lines, the VMM bit line voltage is larger in voltage magnitude than the smaller bit line voltages used during program-verify for memory cells positioned in blocks farther from the bit line drivers and the bit line voltages used during program-verify for memory cells positioned in blocks closer to the bit line drivers,
• applying read enable voltages to the word lines,
• applying an input vector to the select lines while applying the read enable voltages to the word lines, and
• sensing output current from the selected bit lines.