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US 12,744,064 B2Granted
Memory device related to signal transmission
AssigneeSK hynix Inc.
InventorsKyung Jun Cho, Jin Hyung Lee, Yeon Ho Lee, Hyun Bae Lee, Tae Sik Yun, Chun Seok Jeong
Life of this patent
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Abstract
A memory device includes a base die configured to transmit transmission data that are driven to a first voltage range through a transmission line based on base data, and a core die configured to generate core data by shifting a voltage level of the transmission data received through the transmission line to a second voltage range.
Claims25
A memory device comprising:
- a base die configured to transmit transmission data that are driven to a first voltage range through a transmission line based on base data;
- and
- a core die configured to generate core data by driving the transmission data received through the transmission line to a second voltage range,
- wherein the second voltage range is higher than the first voltage range.
1 more element
A memory device comprising:
- a base die configured to drive a level of base data to a first voltage range and configured to shift the level of the base data from the first voltage range to a second voltage range and configured to transmit transmission data through a transmission line based on a transmission enable signal;
- and
- a core die configured to generate core data based on the transmission data and a reception enable signal,
- wherein the second voltage range is higher than the first voltage range.
1 more element
A memory device comprising:
- a core die configured to generate transmission data in a second voltage range by buffering core data and configured to transmit the transmission data to a transmission line;
- and
- a base die configured to buffer the transmission data, configured to shift a voltage level of the transmission data to a first voltage range, and configured to generate one of normal data and repair data depending on whether the transmission data are repaired,
- wherein the base die is configured to generate the repair data when the transmission data includes an error.
1 more element
A memory device comprising:
- a core die configured to generate transmission data by buffering core data in a second voltage range and configured to transmit the transmission data to a transmission line;
- and
- a base die configured to shift a voltage level of the transmission data to a first voltage range and configured to generate one of normal data and repair data depending on whether the transmission data are repaired,
- wherein the base die is configured to generate the repair data when the transmission data includes an error.
1 more element
Dependencies are inferred from the claim text.