Frequency and amplitude modulation of implant dose for stress management
AssigneeApplied Materials, Inc.
InventorPradeep K. Subrahmanyan
Life of this patent
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Abstract
Embodiments of the disclosure relate to techniques and apparatus for reducing out-of-plane distortion (OPD) in a substrate, as well as control of the effects of OPD and the effects that the modifications made to the substrate to correct for the OPD have on subsequent substrate processing operations performed on the substrate. The present embodiments employ novel techniques to reduce the OPD in a substrate without adding or modifying portions of the substrate that will create issues in subsequent substrate fabrication processes.
Claims14
A method of altering a shape of a substrate, comprising:
- generating an ion beam profile based on a measured shape of an ion beam;
- resampling the ion beam profile to generate a blur kernel, by adjusting a resolution of the ion beam profile to match a resolution of an out-of-plane distortion (OPD) data measured on the substrate having OPD shapes formed therein;
- computing curvature data from the OPD data;
- filtering the curvature data by applying the blur kernel to the curvature data;
- generating an inverse filter, by Fourier transforming the ion beam profile and resampling the Fourier transformed ion beam profile by matching a resolution of the Fourier transformed ion beam profile to a resolution of the curvature data;
- applying the inverse filter to the filtered curvature data to generate corrected curvature data;
- computing an implant dose map based on an empirically generated dose sensitivity curve and the corrected curvature data;
- and
- delivering a varying amount of an implant dopant to a back-side surface of the substrate based on the computed implant dose map, to correct the OPD shapes formed in the substrate.
A method of altering a deformed shape of a substrate, comprising:
- receiving out-of-plane distortion (OPD) data of a back-side surface of a substrate;
- computing an implant dose profile to deliver to the back-side surface of the substrate, comprising:
- generating an ion beam profile based on a measured shape of an ion beam;
- resampling the ion beam profile to generate a blur kernel, by adjusting a resolution of the ion beam profile to match a resolution of an out-of-plane distortion (OPD) data measured on the substrate;
- computing curvature data from the OPD data;
- filtering the curvature data, by applying the blur kernel to the curvature data;
- generating an inverse filter, by Fourier transforming the ion beam profile and resampling the Fourier transformed ion beam profile by matching a resolution of the Fourier transformed ion beam profile to a resolution of the curvature data;
- applying the inverse filter to the filtered curvature data to generate corrected curvature data;
- and
- computing an implant dose profile based on an empirically generated dose sensitivity curve and the corrected curvature data;
- depositing, by use of a chemical vapor deposition (CVD) process, a physical vapor deposition process (PVD), an atomic layer deposition (ALD) process or other useful deposition process, a distortion correction layer on the back-side surface of the substrate;
- and
- applying an ion beam having the computed implant dose profile to the distortion correction layer.
Dependencies are inferred from the claim text.