Critical dimension inspection method and semiconductor device manufacturing method using the same

A method for manufacturing a semiconductor device, the method comprising:

• forming a plurality of second patterns on a first substrate by performing a first photo process under a first condition and an etching process under a second condition,
• wherein the first condition is obtained using a critical dimension inspection method,
• wherein the critical dimension inspection method includes
• applying a photoresist on a second substrate different from the first substrate,
• variably irradiating a dose of light onto the photoresist,
• performing a second photo process on the photoresist, the second photo process including developing the photoresist to form a photoresist pattern,
• forming a plurality of first patterns on the second substrate by performing an etching process under the second condition using the photoresist pattern as an etching mask,
• measuring a width of each of the plurality of first patterns and a spacing between adjacent ones of the plurality of first patterns to obtain a measured width and a measured spacing,
• identifying an identified cause of a defect in the second photo process based on the measured width and the measured spacing, and
• selecting the first condition based on the identified cause of the defect.

A method for manufacturing a semiconductor device, the method comprising:

• forming a plurality of word-lines in a first substrate and extending in a first direction;
• forming a plurality of bit-lines on the first substrate and extending in a second direction, the second direction intersecting the first direction, the forming the plurality of bit-lines including a first photo process under a first condition and an etching process under a second condition;
• forming a plurality of contacts connected to the first substrate, each of the plurality of contacts being disposed between adjacent ones of the plurality of bit-lines;
• and
• forming a plurality of capacitors respectively connected to the plurality of contacts,
• wherein the first condition is obtained through a critical dimension inspection method,
• wherein the critical dimension inspection method includes
• forming a dummy word-line in a second substrate and extending in the first direction, the second substrate being different from the first substrate,
• applying a photoresist on the second substrate,
• variably irradiating a dose of light onto the photoresist,
• performing a second photo process on the photoresist, the second photo process including developing the photoresist to form a photoresist pattern,
• performing an etching process under the second condition using the photoresist pattern as an etching mask to form a plurality of dummy bit-lines extending in the second direction,
• measuring a width in the first direction of each of the plurality of dummy bit-lines and measuring a spacing between two dummy bit-lines adjacent to each other in the first direction of the plurality of dummy bit-lines to obtain a measured width and a measured spacing,
• identifying an identified cause of a defect in the second photo process based on the measured width and the measured spacing, and
• selecting the first condition based on the identified cause of the defect.