US 12,742,687 B2 · Junction temperature estimation

Abstract

The disclosure relates to estimation of junction temperatures of transistors in a power electronics converter. Example embodiments include a method of estimating a junction temperature of a transistor in a power electronics converter configured to convert between first and second supply voltages, the method comprising: providing a gate switching signal to the transistor; measuring a rate of change of current through the converter during a switching period of the transistor; and outputting an estimated junction temperature of the transistor based on the measured rate of change of current, wherein the rate of change of current is measured while a gate voltage of the transistor is above a gate threshold voltage and a drain-source voltage across the transistor is above a predetermined fraction of the first or second supply voltage whereby the rate of change of current is measured in a linear region.

Claims20

Dependent claims

A method of estimating a junction temperature of a transistor in a power electronics converter configured to convert between first and second supply voltages, the method comprising:

providing a gate switching signal to the transistor;
measuring a rate of change of current through the converter during a switching period of the transistor;
and
outputting an estimated junction temperature of the transistor based on the measured rate of change of current,
wherein the rate of change of current is measured by inputting the gate switching signal and an output of a current sensor to a processor, and the processor then extracts a measure of the rate of change of current at a point where a gate voltage of the transistor is above a gate threshold voltage and a drain-source voltage across the transistor is above a predetermined fraction of the first or second supply voltage whereby the rate of change of current is measured in a linear region.

2 more elements

An electrical power system, comprising:

a power electronics converter configured to convert between first and second supply voltages, the converter comprising a plurality of semiconductor switches, each semiconductor switch comprising a transistor;
a controller configured to provide switching signals to each of the semiconductor switches;
a current sensor arranged to measure current through the converter to one of the first and second voltage supplies;
and
a junction temperature measurement module comprising a processor and configured to:
receive the switching signals;
and
receive a current signal from the current sensor;
measure, based on the current signal received from the current sensor and the switching signals, a rate of change of current through the converter during a switching period of the transistor while a gate voltage of the transistor is above a gate threshold voltage and a drain-source voltage across the transistor is above a predetermined fraction of the first or second supply voltage whereby the rate of change of current is measured in a linear region;
and
output an estimated junction temperature of the transistor based on the measured rate of change of current.

8 more elements

Dependencies are inferred from the claim text.

Junction temperature estimation

Life of this patent

Junction temperature estimation

Life of this patent

Abstract

Claims20