Vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus and deposition method using same

A vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus, comprising:

• a light source, a beam transmission system, a top cover, a chamber, a substrate susceptor, motion components, a horizontal layered showerhead, first to Nth gas inlets, light field coupling windows, beam shaping devices, in-situ monitoring windows, a vacuum pump interface, and a heating device;
• the chamber has a bottom base and an open top;
• the substrate susceptors are positioned in the chamber, with their center mounted on a rotating shaft driven by a motor;
• multiple motion components are arranged on the substrate susceptor, and each of the multiple motion components is capable of rotating around a central axis thereof;
• the heating device is arranged below the substrate susceptor;
• the top cover is arranged at a top of the chamber to seal the chamber, and space between the chamber and the top cover is formed as a reactor of the MOCVD apparatus;
• the horizontal layered showerhead is arranged above the substrate susceptor at a center of the chamber, and a center of the horizontal layered showerhead is coaxial with the rotating shaft, and corresponding to the first to Nth gas outlets, the first to Nth gas outlets in N rows are formed in the horizontal layered showerhead, respectively;
• first to Nth gas inlets are formed on the top cover along a direction perpendicular to the surface of the substrate susceptor, respectively, and the first to Nth gas inlets connect to the reactor of the MOCVD apparatus through the first to Nth gas outlets, respectively;
• multiple light field coupling windows are arranged on the top cover with the horizontal layered showerhead as a center, and the multiple light field coupling windows are symmetrically distributed with respect to the center of the horizontal layered showerhead, and centers of the multiple light field coupling windows are located at a same circle;
• the beam shaping devices are arranged in the multiple light field coupling windows;
• the light source is transmitted through the beam transmission system and vertically enters the reactor of the MOCVD apparatus via the optical field coupling windows;
• the in-situ monitoring windows are arranged on the top cover and located outside the region of the multiple light field coupling windows, and a center of the in-situ monitoring window is located above a zone on the substrate susceptor where substrates are placed on a substrate tray;
• a light field coupling chamber is formed between a zone that is covered by a light field on the substrate susceptor and the top cover;
• a growth chamber is formed between the zone on the substrate susceptor where the substrates are placed on and the top cover above;
• a gas flow guide chamber is formed between the light field coupling chamber and the growth chamber;
• the distance between the substrate susceptor and the top cover in the light field coupling chamber is greater than the distance between the substrate susceptor and the top cover in the growth chamber, and the distance between the substrate susceptor and the top cover in the gas flow guide chamber gradually increases, and an inclination angle is formed;
• the distance between the substrate susceptor and the top cover gradually decreases from a side of the light field coupling chamber to a side of the growth chamber, such that gas flows in the gas flow guide chamber flow to the growth chamber at an increasing speed;
• the suction pump interface is formed at a bottom of the chamber;
• N is a natural number of greater than or equal to 2.