Methods of forming structures, semiconductor processing systems, and semiconductor device structures
AssigneeASM IP Holding B.V.
InventorsAmir Kajbafvala, Yanfu Lu, Robinson James, Caleb Miskin
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Abstract
A method of forming structure includes providing a substrate in a reaction chamber, forming a first layer overlaying the substrate, and forming a second layer onto the first layer. Temperature of the first layer is controlled during the forming of the first layer using infrared electromagnetic radiation emitted by the first layer. Temperature of the second layer is controlled during the forming of the second layer using infrared electromagnetic radiation emitted by the second layer. Semiconductor device structures and semiconductor processing systems are also described.
Claims20
A semiconductor processing system, comprising:
- a reaction chamber configured for forming a structure on a substrate;
- a pyrometer optically coupled to the substrate;
- a heater element radiantly coupled to the substrate;
- and
- a controller disposed in communication with the pyrometer and operatively connected to the heater element, the controller responsive to instructions recorded on a non-transitory machine-readable memory to:
- form a first layer overlaying the substrate;
- control a temperature of the substrate using infrared electromagnetic radiation emitted by the first layer during the forming of the first layer;
- form a second layer onto the first layer;
- and
- control the temperature of the substrate using infrared electromagnetic radiation emitted by the second layer during the forming of the second layer.
Dependencies are inferred from the claim text.