Cleaning assemblies for substrate processing chambers

A method comprising:

• positioning a pedestal disposed in a substrate processing chamber in a first vertical position for a first time period, the substrate processing chamber including a cleaning assembly comprising a gas manifold having an inlet coupled to a cleaning fluid source, a first outlet coupled to an internal volume of the substrate processing chamber located above a faceplate of the substrate processing chamber, and second outlet coupled to an isolation valve, the isolation valve disposed between the second outlet of the gas manifold and a distribution ring fluidly coupled to the internal volume of the substrate processing chamber located below the faceplate;
• cleaning the faceplate of the substrate processing chamber by directing cleaning fluid into the internal volume of the substrate processing chamber located above the faceplate;
• diverting a portion of the cleaning fluid to the distribution ring and into the internal volume located below the faceplate by opening up isolation valve while maintaining the pedestal in the first vertical position for a second time period;
• and
• cleaning a pedestal edge by positioning the pedestal in a second vertical position for a third time period, the second vertical position being different than the first vertical position.

A method comprising:

• positioning a pedestal disposed in a substrate processing chamber in a first vertical position for a first time period, the substrate processing chamber including a cleaning assembly comprising a gas manifold having an inlet coupled to a cleaning fluid source, a first outlet coupled to an internal volume of the substrate processing chamber located above a faceplate of the substrate processing chamber, and second outlet coupled to an isolation valve, the isolation valve disposed between the second outlet of the gas manifold and a distribution ring fluidly coupled to the internal volume of the substrate processing chamber located below the faceplate;
• directing cleaning fluid into the internal volume of the substrate processing chamber located above the faceplate;
• opening up the isolation valve while maintaining the pedestal in the first vertical position for a second time period;
• positioning the pedestal in a second vertical position for a third time period while the isolation valve is opened;
• and
• positioning the pedestal in a third vertical position for a fourth time period while the isolation valve is opened, the second vertical position being located below the first vertical position, and the third vertical position being located below the second vertical position.