Structures and methods for processing a semiconductor substrate

A method of positioning an exclusion ring on a platen of a chemical vapor deposition tool, the method comprising:

• positioning the exclusion ring over the platen, the exclusion ring including:
• an annular body including an outer peripheral edge, an upper side, and a lower side opposite to the upper side, a flange extending inward from the outer peripheral edge, the flange including a first surface at the lower side contacting a second surface of a lower portion of the platen, a third surface at the lower side contacting a fourth surface of an upper portion of the platen, a fifth surface at the lower side extending over a part of a wafer positioned on the upper portion of the platen, a sixth surface at the upper side and facing away from the fifth surface, and a first alignment structure on the flange, the first alignment structure including a guiding surface, the guiding surface sloping at an angle greater than 90 degrees relative to the sixth surface at the upper side of the annular body;
• an opening defined by the annular body;
• and
• a plurality of orifices that extend into the fifth surface and extend through the annular body to the sixth surface, the plurality of orifices extending around the opening, each respective orifice of the plurality of orifices overlaps a gas groove that is adjacent to the upper portion of the platen and adjacent to the wafer, wherein the platen includes a second alignment structure on the second surface of the lower portion of the platen, and wherein the plurality of orifices are transverse to the gas groove;
• contacting the first alignment structure with the second alignment structure;
• maintaining contact between the first alignment structure and the second alignment structure;
• while maintaining contact between the first alignment structure and the second alignment structure, moving the first alignment structure relative to the second alignment structure;
• and
• aligning the first alignment structure with the second alignment structure.

A method of positioning an exclusion ring on a platen of a chemical vapor deposition tool, the method comprising:

• positioning the exclusion ring over the platen, the exclusion ring including:
• an annular body including an outer peripheral edge an upper side, a lower side opposite to the upper side, a flange extending inward from the outer peripheral edge, the flange including a first surface at the lower side contacting a second surface of a lower portion of the platen, a third surface at the lower side contacting a fourth surface of an upper portion of the platen, a fifth surface at the lower side extending over a part of a wafer positioned on the upper portion of the platen, and a sixth surface at the upper side and facing away from the fifth surface, and a first alignment structure on the flange;
• and
• an opening defined by the annular body;
• and
• a plurality of orifices extend through the annular body from the fifth surface to the sixth surface at a portion of the annular body inset inward from the flange, each respective orifice of the plurality of orifices overlaps a gas groove that is adjacent to the upper portion of the platen and is adjacent to the wafer, and wherein the platen includes a second alignment structure on the second surface of the lower portion of the platen,
• wherein one of the first alignment structure or the second alignment structure has a sloped guiding surface;
• contacting the first alignment structure with the second alignment structure;
• maintaining contact between the first alignment structure and the second alignment structure;
• while maintaining contact between the first alignment structure and the second alignment structure, moving the first alignment structure relative to the second alignment structure;
• and
• aligning the first alignment structure with the second alignment structure.