Multi-pattern in-pad surface for polish rate control

A method, comprising:

• rotating, concurrently, a polishing head holding a semiconductor substrate about a first axis and a platen holding a polishing pad having two or more pad surface patterns about a second axis,
• wherein the platen holding the polishing pad is below the polishing head,
• wherein the two or more pad surface patterns are associated with a roll-off profile at or near an edge portion of the semiconductor substrate,
• wherein rotating the polishing head about the first axis comprises rotating the polishing head about a central axis of the polishing head using a first rotational vector, and
• wherein rotating the platen about the second axis comprises rotating the platen about a central axis of the platen using a second rotational vector;
• engaging the semiconductor substrate and the polishing pad;
• and
• polishing, concurrently, two or more portions of the semiconductor substrate using the polishing pad.

A system, comprising:

• a platen;
• and
• a polishing pad over the platen and comprising:
• a first predefined pad surface pattern occupying a first region of the polishing pad,
• wherein the first predefined pad surface pattern corresponds to a first polishing rate during a polishing operation using the polishing pad;
• and
• a second predefined pad surface pattern occupying a second region of the polishing pad,
• wherein the second predefined pad surface pattern is different from the first predefined pad surface pattern, and
• wherein the second predefined pad surface pattern corresponds to a second polishing rate during the polishing operation using the polishing pad;
• and
• a semiconductor substrate positioned on the polishing pad,
• wherein the semiconductor substrate has a roll-off profile.