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US 12,740,487 B2Granted
Strong bonding structures and methods of forming the same
AssigneeAdeia Semiconductor Bonding Technologies Inc.
InventorsCyprian Emeka Uzoh, Belgacem Haba, Rajesh Katkar, Oliver Zhao
Life of this patent
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Abstract
A method of bonding substrates comprises depositing a fluorine-doped dielectric layer on a first substrate, exposing the fluorine-doped dielectric layer to a hydrogen-containing plasma, and directly bonding the fluorine-doped dielectric layer to a surface of a second substrate without the use of an intervening adhesive.
Claims20
A method of bonding substrates, the method comprising:
- depositing a fluorine-doped dielectric layer on a first substrate;
- exposing the fluorine-doped dielectric layer to a hydrogen-containing plasma;
- and
- directly bonding the fluorine-doped dielectric layer to a surface of a second substrate without the use of an intervening adhesive.
1 more element
Dependencies are inferred from the claim text.