Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a substrate;
• an interlayer insulating layer on the substrate;
• a plurality of wiring lines disposed in the interlayer insulating layer;
• a mask layer on the interlayer insulating layer;
• a conductive pad in the mask layer;
• a plurality of contact plugs connecting the plurality of wiring lines and the conductive pad;
• a first protective insulating layer on the mask layer;
• a second protective insulating layer on the first protective insulating layer;
• a plurality of insulating structures disposed in at least one of the first protective insulating layer or the second protective insulating layer;
• and
• a bump structure on the second protective insulating layer, wherein
• the plurality of insulating structures comprise:
• a first insulating structure comprising a first material having a first physical property;
• and
• a second insulating structure comprising a second material having a second physical property, wherein
• the first material and the second material comprise a same material and the first physical property and the second physical property are different physical properties, and
• a thickness of the conductive pad is greater than a thickness of each wiring line of the plurality of wiring lines, and
• the bump structure is in contact with the conductive pad through the first protective insulating layer and the second protective insulating layer.