Power semiconductor module

A power semiconductor module, comprising:

• a semiconductor chip including a power transistor and an electrode provided on a surface, the electrode being connected to a gate of the power transistor;
• a heat dissipation sheet;
• a wiring board disposed on the heat dissipation sheet and including a wiring pattern on a surface of the wiring board;
• an interposer disposed between the semiconductor chip and the wiring board and including a resistor penetrating through the interposer;
• a busbar extending upward from the wiring board, a first end portion thereof being connected to the wiring pattern on the surface of the wiring board and a second end portion thereof being an external terminal;
• and
• a resin housing that seals the semiconductor chip, the wiring board, the interposer, the heat dissipation sheet, and the busbar except a bottom surface of the heat dissipation sheet and the second end portion of the busbar, wherein
• the electrode on the surface of the semiconductor chip and the wiring pattern on the surface of the wiring board are connected to both ends of the resistor penetrating through the interposer,
• the interposer is a semiconductor substrate, and
• the resistor penetrating through the interposer is an impurity diffusion region in the semiconductor substrate.