Bonding wire for semiconductor devices

A bonding wire for semiconductor devices, the bonding wire comprising:

• a core material of Cu or Cu alloy;
• and a coating layer containing conductive metal other than Cu formed on a surface of the core material, wherein
• the coating layer has a region containing Pd as a main component on a core material side, and has a region containing Ni and Pd in a range from a wire surface to a depth of 0.5 d when a thickness of the coating layer is defined as d (nm) in a thickness direction of the coating layer,
• a thickness d of the coating layer is 10 nm or more and 130 nm or less,
• a ratio CNi/CPd of a concentration CNi (mass %) of Ni to a concentration CPd (mass %) of Pd relative to the entire wire is 0.02 or more and 0.7 or less, and
• a position indicating a maximum concentration of Ni is present in a range from the wire surface to a depth of 0.5 d in a concentration profile in a depth direction of the wire, and the maximum concentration of Ni is 10 atomic % or more.