Hybrid organic and non-organic interposer with embedded component in molding structure and methods for forming the same

A method of forming a semiconductor structure, comprising:

• forming a hybrid interposer by:
• forming a non-organic structure comprising wiring interconnects and through-substrate via (TSV) structures embedded in a non-organic material layer;
• forming an organic structure on the non-organic structure, the organic structure comprising wiring interconnects and TSV structures embedded in an organic material layer;
• and
• forming a molding structure on the organic structure, the molding structure comprising an integrated passive device and TSV structures embedded in a molding material layer;
• bonding a semiconductor die to a first side of the hybrid interposer;
• and
• bonding a package substrate to a second side of the hybrid interposer, the package substrate comprising a glass epoxy plate, a board-side surface laminar circuit (SLC) disposed on a board side of the glass epoxy plate, a chip-side SLC disposed on an opposing chip side of the glass epoxy plate, and through-core via structures that extend through the glass epoxy plate to electrically connect the board-side SLC and the chip-side SLC,
• wherein a Young's modulus of the molding structure is greater than a Young's modulus of the organic structure;
• wherein:
• the integrated passive device comprises a resistor, a capacitor, an inductor, a microstrip line, or an impedance matching element and is electrically connected to the package substrate through via device bumps embedded in the molding material layer;
• and
• the via device bumps, the TSV structures, and portions of the integrated passive device are formed by:
• depositing a metallic seed layer;
• depositing a photoresist layer on the metallic seed layer;
• patterning the photoresist layer to expose portions of the seed layer;
• depositing a metallic fill material onto the exposed portions of the photoresist layer;
• removing the photoresist layer;
• and
• etching portions of the metallic seed layer exposed by the removal of the photoresist layer.

A method of forming a semiconductor structure, comprising:

• forming a hybrid interposer by:
• forming an organic structure comprising wiring interconnects and through-substrate via (TSV) structures embedded in an organic material layer;
• forming a non-organic structure on the organic structure, the non-organic structure comprising wiring interconnects and TSV structures embedded in a non-organic material layer;
• and
• forming a molding structure on the non-organic structure, the molding structure comprising an integrated passive device and TSV structures embedded in a molding material layer;
• bonding a semiconductor die to a first side of the hybrid interposer;
• and
• bonding a package substrate to a second side of the hybrid interposer, the package substrate comprising a glass epoxy plate, a board-side surface laminar circuit (SLC) disposed on a board side of the glass epoxy plate, a chip-side SLC disposed on an opposing chip side of the glass epoxy plate, and through-core via structures that extend through the glass epoxy plate to electrically connect the board-side SLC and the chip-side SLC,
• wherein a coefficient of thermal expansion of the molding material layer is lower than a coefficient of thermal expansion of the organic material layer, and
• wherein a Young's modulus of the molding structure is greater than a Young's modulus of the organic structure;
• wherein:
• the integrated passive device comprises a resistor, a capacitor, an inductor, a microstrip line, or an impedance matching element and is electrically connected to the package substrate through via device bumps embedded in the molding material layer;
• and
• the via device bumps, the TSV structures, and portions of the integrated passive device are formed by:
• depositing a metallic seed layer;
• depositing a photoresist layer on the metallic seed layer;
• patterning the photoresist layer to expose portions of the seed layer;
• depositing a metallic fill material onto the exposed portions of the photoresist layer;
• removing the photoresist layer;
• and
• etching portions of the metallic seed layer exposed by the removal of the photoresist layer.