Deformation-resistant interposer for a local silicon interconnect and methods for forming the same

A semiconductor structure comprising a composite interposer, wherein the composite interposer comprises:

• a local-silicon-interconnect-containing (LSI-containing) interposer that comprises a local silicon interconnect (LSI) bridge;
• and
• an organic interposer located on the LSI-containing interposer, comprising redistribution dielectric layers embedding redistribution wiring interconnects and a metallic counter-deformation structure,
• wherein the metallic counter-deformation structure comprises:
• a plurality of metallic via structures;
• a first metallic plate located on a first side of the plurality of metallic via structures;
• and
• a second metallic plate located on a second side of the plurality metallic via structures and vertically spaced from the first metallic plate,
• wherein the metallic counter-deformation structure is electrically floating and is electrically isolated from each of the redistribution wiring interconnects.

A semiconductor structure comprising a composite interposer, wherein the composite interposer comprises:

• a local-silicon-interconnect-containing (LSI-containing) interposer that comprises a local silicon interconnect (LSI) bridge, a set of through-integrated-fan-out-via (TIV) structures laterally surrounding the LSI bridge, and a molding compound interposer frame that laterally surrounds the LSI bridge and the TIV structures;
• and
• an organic interposer located on the LSI-containing interposer and comprising redistribution dielectric layers embedding redistribution wiring interconnects and metallic counter-deformation structures that are electrically floating,
• wherein each of the metallic counter-deformation structures comprises a respective proximal metallic plate and a respective distal metallic plate that are interconnected to each other by a respective plurality of metallic via structures, and
• wherein the LSI bridge comprises a dielectric liner comprising vertically-extending portions that laterally surround through-silicon via structures within the LSI bridge and a horizontally-extending portion that contacts the organic interposer.